InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 μm Wavelength

被引：23

作者：

Tossoun, Bassem ^{[1
]}

Zang, Jizhao ^{[1
]}

Addamane, Sadhvikas J. ^{[2
]}

Balakrishnan, Ganesh ^{[2
]}

Holmes, Archie L., Jr. ^{[1
]}

Beling, Andreas ^{[1
]}

机构：

[1] Univ Virginia, Charles L Brown Dept Elect & Comp Engn, Charlottesville, VA 22901 USA

[2] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2018年 / 36卷 / 20期

关键词：

InP; MWIR; photodetectors; photodiodes; photonic integrated circuits (PICs); SWIR; waveguides; N PHOTODIODES; ELECTROABSORPTION;

D O I：

10.1109/JLT.2018.2867808

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Waveguide-integrated photodiodes with InGaAs/GaAsSb type-II quantum well absorption regions designed to absorb light at 2 mu m are presented. A novel dual-integrated waveguide-depletion layer was used to maximize quantum efficiency in photodiodes designed with thin absorbers for high-speed optical response. Low dark currents (1 nA at -1 V) and an internal responsivity of 0.84 A/W along with a bandwidth above 10 GHz and an open eye diagram at 10 Gb/s have been demonstrated at 2 mu m. The high-speed carrier dynamics within InGaAs/GaAsSb type-II quantum wells are explored for the first time and suggest that the transit time of the photodiode is limited by light hole escape times in the quantum wells.

引用

页码：4981 / 4987

页数：7

共 21 条

[1]

Boltaev A. P., 2000, QWSL06P RUSS AC SCI

[2] Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells [J].

Chen, Baile ;

Holmes, Archie L., Jr. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (31)

[3]

Chen BL, 2011, 2011 IEEE PHOTONICS CONFERENCE (PHO), P35, DOI 10.1109/PHO.2011.6110412

[4]

Corbett B., 2012, P INT C IND PHOSPH R, P221

[5] Sub 10 ps Carrier Response Times in Electroabsorption Modulators Using Quantum Well Offsetting [J].

Daunt, Chris L. M. ;

Cleary, Ciaran S. ;

Manning, Robert J. ;

Thomas, Kevin ;

Young, Robert J. ;

Pelucchi, Emanuele ;

Corbett, Brian ;

Peters, Frank H. .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 48 (11) :1467-1475

[6] Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector [J].

Effenberger, FJ ;

Joshi, AM .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1996, 14 (08) :1859-1864

[7] QUANTUM-WELL CARRIER SWEEP OUT - RELATION TO ELECTROABSORPTION AND EXCITON SATURATION [J].

FOX, AM ;

MILLER, DAB ;

LIVESCU, G ;

CUNNINGHAM, JE ;

JAN, WY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (10) :2281-2295

[8] TEMPORAL RESPONSE OF PHOTODIODES WITH GAAS/ALXGA1-XAS (0.1-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.3) MULTIQUANTUM WELL ABSORPTION REGIONS [J].

GOSWAMI, S ;

DAVIS, L ;

BHATTACHARYA, PK .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) :4888-4892

[9] COHERENT LASER-RADAR AT 2 MU-M USING SOLID-STATE LASERS [J].

HENDERSON, SW ;

SUNI, PJM ;

HALE, CP ;

HANNON, SM ;

MAGEE, JR ;

BRUNS, DL ;

YUEN, EH .

IEEE TRANSACTIONS ON GEOSCIENCE AND REMOTE SENSING, 1993, 31 (01) :4-15

[10] High-speed low-noise p-i-n InGaAs photoreceiver at 2-μm wavelength [J].

Joshi, Abhay ;

Becker, Don .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (5-8) :551-553

← 1 2 3 →