Analysis of gate shot noise in MOSFETs with ultrathin gate oxides

被引：17
作者：
Fiegna, C [1 ]
机构：
[1] Univ Ferrara, Dept Engn, I-44100 Ferrara, Italy
来源：
IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 02期
关键词：
MOSFETs; shot noise; simulation; tunneling;
D O I：
10.1109/LED.2002.807695
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of gate shot noise associated with gate leakage current in MOSFETs is studied by means of analytical, models and numerical device simulation. The effects of shot noise on the main two-port noise parameters (minimum noise figure, equivalent noise resistance, and optimum source admittance) and their,dependence on oxide thickness and on the level of tunneling leakage current are analyzed.
引用
收藏
页码：108 / 110
页数：3
相关论文
共 9 条
[1]   HIGH-FREQUENCY FET NOISE PERFORMANCE - A NEW APPROACH [J].
CAPPY, A ;
HEINRICH, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :403-409
[2]   INFLUENCE OF THE GATE LEAKAGE CURRENT ON THE NOISE PERFORMANCE OF MESFETS AND MODFETS [J].
DANNEVILLE, F ;
DAMBRINE, G ;
HAPPY, H ;
TADYSZAK, P ;
CAPPY, A .
SOLID-STATE ELECTRONICS, 1995, 38 (05) :1081-1087
[3]   An MOS transistor model for RF IC design valid in all regions of operation [J].
Enz, C .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (01) :342-359
[4]  
Goo JS, 2000, IEEE T ELECTRON DEV, V47, P2410, DOI 10.1109/16.887030
[5]  
*ISE, 2002, US MAN V 7 5
[6]  
Lee T.H., 1998, DESIGN CMOS RADIO FR
[7]   Modeling and simulation of tunneling through ultra-thin gate dielectrics [J].
Schenk, A ;
Heiser, G .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :7900-7908
[8]  
Semiconductor Industry Association, 2001, INT TECHN ROADM SEM
[9]   Simulation of thermal noise in scaled MOSFETs [J].
Spedo, S ;
Fiegna, C .
FLUCTUATION AND NOISE LETTERS, 2002, 2 (02) :L109-L116
1