Surface morphology of AlN and size dispersion of GaN quantum dots

被引：13

作者：

Matsuse, A ^{[1
]}

Grandjean, N ^{[1
]}

Damilano, B ^{[1
]}

Massies, J ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteo Epitaxie & Applicat, F-06560 Valbonne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 274卷 / 3-4期

关键词：

crystal morphology; molecular beam epitaxy; quantum dots; nitrides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2004.10.147

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of the basic growth parameters (growth temperature, V/III ratio and growth rate) on the surface morphology of AIN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrate is reported. Optimized-growth conditions lead to a significant decrease of the surface roughness. The use of such surfaces as template to grow GaN quantum dots is shown to improve their size dispersion. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：387 / 393

页数：7

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