Photoluminescence studies on energy transfer processes in cerium-doped Gd3Al2Ga3O12 crystals

被引:21
作者
Kitaura, M. [1 ]
Sato, A. [1 ]
Kamada, K. [2 ]
Kurosawa, S. [2 ,3 ]
Ohnishi, A. [1 ]
Sasaki, M. [1 ]
Hara, K. [4 ]
机构
[1] Yamagata Univ, Fac Sci, Dept Phys, Yamagata 9908560, Japan
[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808679, Japan
[4] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
基金
日本学术振兴会;
关键词
Energy transfer; Host sensitization; Photoluminescence; Scintillator; Ce:GAGG; Synchrotron radiation; GD PHOSPHATE-GLASSES; SCINTILLATION PROPERTIES; LUMINESCENCE; GROWTH;
D O I
10.1016/j.optmat.2014.12.040
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have measured photoluminescence properties of cerium-doped Gd3Al2Ga3O12 (Ce:GAGG) crystals at low temperatures with use of synchrotron radiation. Excitation spectra for the Ce3+ 5d-4f emission exhibit prominent peaks at Gd3+ intra-4f absorption bands. The Gd3+ intra-4f emission band is observed at 3.91 eV, but is not in resonance with the lowest energy Gd3+ intra-4f absorption band at 3.95 eV. The temperature dependence of the Gd3+ emission intensity is not correlated with that of the Ce3+ emission intensity. Decay curves of the Ce3+ emission were also measured at 9 K under excitation at various photon energies. The decay curve is remarkably changed, depending on the excitation photon energies. The present results give us hints to understand the whole of energy transfer processes in Ce:GAGG crystals. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:45 / 48
页数:4
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