Resistivity of the spin-polarized two-dimensional electron gas: scaling and width effect

被引：21
作者：
Gold, A
Dolgopolov, VT
机构：
[1] Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse, France
[2] Inst Solid State Phys, Chernogolovka 142432, Moscow Dist, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
magnetoresistance; spin-polarization; heterostructure;
D O I：
10.1016/S1386-9477(02)00797-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present results for the magnetoresistance of the two-dimensional electron gas at zero temperatures in a parallel magnetic field. The parallel field gives rise to a spin-polarized electron gas. At low density, the magnetoresistance is positive due to screening effects. For impurity scattering we discuss the density dependence of the magnetoresistance and the related scaling properties. Width effects of the electron gas on the magnetoresistance are described for impurity scattering and interface-roughness scattering. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：280 / 283
页数：4
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