Observation of acceptor level of p-type SrTiO3 by high-resolution soft-X-ray absorption spectroscopy

被引：8
作者：
Higuchi, T
Tsukamoto, T
Yamaguchi, S
Kobayashi, K
Sata, N
Ishigame, M
Shin, S
机构：
[1] Sci Univ Tokyo, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
[2] Nagoya Inst Technol, Nagoya, Aichi 4668555, Japan
[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan
[4] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
[5] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
[6] RIKEN, Hyogo 6795143, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 199卷
关键词：
SrTi1-xScxO3; O 1s XAS; acceptor level; hole state; p-type;
D O I：
10.1016/S0168-583X(02)01580-X
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The electronic structure of Sc-doped SrTiO3 (SrTi1-xScxO3) has been investigated by soft-X-ray absorption spectroscopy (XAS) in the 0 Is core region. Hole states at the top of the valence band and acceptor-induced levels just above the Fermi level are observed below the 0 Is threshold. The XAS features and their temperature dependence are in good agreement with electrical conductivity studies on the same samples. These results conclude that SrTi1-xScxO3 is a p-type semiconductor with deep acceptor levels lying in the middle of the band gap. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：255 / 259
页数：5
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