Observation of transient enhanced diffusion in B+-implanted Si by buried boron isotopes

被引：2
作者：
Chang, RD
Chiang, HP
Liu, HW
Ho, LW
Chiang, PC
Tsai, JR
Lin, JP
机构：
[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan
[2] Natl Nano Device Labs, Hsinchu, Taiwan
[3] Nanya Technol Corp, Taoyuan, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 11期
关键词：
boron; transient enhanced diffusion; ion implantation; silicon; clustering; dislocation; isotope;
D O I：
10.1143/JJAP.39.6136
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method was developed to investigate the transient enhanced diffusion (TED) of implanted boron by observing the redistribution of buried boron isotopes in the implanted region. The buried layer was created by B-10(+) implantation and the implant damage was induced by B-11(+) implants at various doses. With low-dose ion implantation, implanted dopants exhibit similar TED behavior as embedded dopants. For implant doses higher than 5 x 10(14) cm(-2), the uphill diffusion of B-10 near the immobile B-11 peak indicates the presence of TED under boron interstitial clustering. The presence of TED remains in the projected range for the high-dose implantation at 25 keV even though dense dislocations exist. However, as the implant energy decreases to 15 keV, TED is prohibited from the surface to the project range.
引用
收藏
页码：6136 / 6138
页数：3
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