Ferromagnetic Fe3N films grown on GaN(0002) substrates by MOCVD

被引：16

作者：

Tao, Z. K. ^{[1
]}

Cui, X. G. ^{[1
]}

Zhang, R. ^{[1
]}

Xiu, X. Q. ^{[1
]}

Xie, Z. L. ^{[1
]}

Zheng, Y. D. ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Key Lab Adv Photon & Elect Mat, Nanjing Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 09期

关键词：

MOCVD; Iron nitride; SQUID; Spin-injection; VAPOR CONDENSATION PROCESS; MAGNETIC-PROPERTIES; SPIN INJECTION; IRON; EPSILON-FE3N; FE4N; NITROGEN;

D O I：

10.1016/j.jcrysgro.2009.12.042

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown Fe3N films on GaN(0 0 0 2) substrates by metalorganic chemical vapor deposition (MOCVD). Under lower growth temperatures, small iron particles were formed on GaN surface, while under higher growth temperatures. Fe3N films were formed. The surface morphology of samples with different growth temperatures were characterized by atomic force microscopy. In X-ray Photoelectron Spectroscopy (XPS) measurement, the coexistence of metallic Fe and Fe2+ or Fe3+ was observed in the sample grown at 600 degrees C, while the sample grown at 1050 degrees C showed only high valence forms of Fe ions. It was also found that the magnetic moments of Fe3N prefer to align normal to the c-axis. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1525 / 1528

页数：4

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