Epitaxial Growth and Properties of MgxZn1-xO Films Produced by Pulsed Laser Deposition

被引：13
|
作者：
Lotin, A. A. [1 ]
Novodvorsky, O. A. [1 ]
Khaydukov, E. V. [1 ]
Glebov, V. N.
Rocheva, V. V. [1 ]
Khramova, O. D. [1 ]
Panchenko, V. Ya. [1 ]
Wenzel, C. [2 ]
Trumpaicka, N. [2 ]
Chtcherbachev, K. D. [3 ]
机构：
[1] Russian Acad Sci, Inst Laser & Informat Technol, Shatura 140700, Moscow Oblast, Russia
[2] Tech Univ Dresden, Inst Semicond & Microsyst Technol, D-01063 Dresden, Germany
[3] Technol Univ, Moscow State Inst Steel & Alloys, Moscow 119049, Russia
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
Atomic Force Microscopy; Zinc Oxide; Pulse Laser Deposition; Epitaxial Growth; Crystal Lattice Parameter;
D O I：
10.1134/S106378261002020X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The MgxZn1-xO thin films with a Mg content corresponding to x = 0-0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the films on the single-crystal Al2O3 (00.1) substrates are established. The record limit of solubility of Mg in hexagonal ZnO, x = 35 is attained. In this case, the lattice mismatch for the parameter a of the ZnO and Mg0.35Zn0.65O films does not exceed 1%, whereas the band gaps of the films differ by 0.78 eV. The surface roughness of the films corresponds to 0.8-1.5 nm in the range of x = 0-0.27.
引用
收藏
页码：246 / 250
页数：5
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