Epitaxial Growth and Properties of MgxZn1-xO Films Produced by Pulsed Laser Deposition

被引：13

作者：

Lotin, A. A. ^{[1
]}

Novodvorsky, O. A. ^{[1
]}

Khaydukov, E. V. ^{[1
]}

Glebov, V. N.

Rocheva, V. V. ^{[1
]}

Khramova, O. D. ^{[1
]}

Panchenko, V. Ya. ^{[1
]}

Wenzel, C. ^{[2
]}

Trumpaicka, N. ^{[2
]}

Chtcherbachev, K. D. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst Laser & Informat Technol, Shatura 140700, Moscow Oblast, Russia

[2] Tech Univ Dresden, Inst Semicond & Microsyst Technol, D-01063 Dresden, Germany

[3] Technol Univ, Moscow State Inst Steel & Alloys, Moscow 119049, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

Atomic Force Microscopy; Zinc Oxide; Pulse Laser Deposition; Epitaxial Growth; Crystal Lattice Parameter;

D O I：

10.1134/S106378261002020X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The MgxZn1-xO thin films with a Mg content corresponding to x = 0-0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the films on the single-crystal Al2O3 (00.1) substrates are established. The record limit of solubility of Mg in hexagonal ZnO, x = 35 is attained. In this case, the lattice mismatch for the parameter a of the ZnO and Mg0.35Zn0.65O films does not exceed 1%, whereas the band gaps of the films differ by 0.78 eV. The surface roughness of the films corresponds to 0.8-1.5 nm in the range of x = 0-0.27.

引用

页码：246 / 250

页数：5

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