Plasma damage in p-GaN

被引：30

作者：

Cao, XA ^{[1
]}

Zhang, AP

Dang, GT

Ren, F

Pearton, SJ

Van Hove, JM

Hickman, RA

Shul, RJ

Zhang, L

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Blue Lotus Micro Devices, Eden Prairie, MN 55344 USA

[4] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 03期

基金：

美国国家科学基金会;

关键词：

GaN; plasma; damage; ICP; diodes;

D O I：

10.1007/s11664-000-0059-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of Inductively Coupled Plasma H-2 or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550 Angstrom. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 degrees C restores the initial conductivity.

引用

页码：256 / 261

页数：6

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