Effect of defect interactions with interstitial Ag in the lattice of BixSb2-xTe3 alloys and their thermoelectric properties

被引:13
作者
Lee, Jae Ki [1 ]
Park, Sungjin [1 ]
Ryu, Byungki [1 ]
Lee, Ho Seong [2 ]
Park, Jongho [1 ]
Park, SuDong [1 ]
机构
[1] Korea Elect Res Inst, Energy Convers Res Ctr, Chang Won 51543, South Korea
[2] Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea
关键词
PERFORMANCE; FIGURE; MERIT; VASP; PBTE;
D O I
10.1063/5.0040808
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, the effect of Ag defects on the lattice and thermoelectric properties of Ag-doped BixSb2-xTe3 (BST) alloys are systematically investigated. Using density-functional calculations, we reveal that Ag impurity defects occupying interstitial sites in the BST affect the formation of intrinsic defects in the host materials. Ag interstitial defects, which are responsible for increasing the lattice parameter of the c axis, lower the formation energies of Bi-Te and Sb-Te acceptor defects more effectively in the Bi-rich BST than in the Bi-poor BST. In addition, these Ag interstitials induce the formation of Ag-Bi and Ag-Sb in BixSb2-xTe3. Therefore, Ag-induced defect interactions can be used to finely optimize the defects and doping density by varying the Bi content. Furthermore, the phonon thermal conductivity is reduced with the formation of nanoscale twin structures with various stacking faults. Finally, a high figure of merit of 1.4 at 423K is achieved for p-type BST alloys.
引用
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页数:6
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