共 35 条
- [21] KOHN JA, 1956, AM MINERAL, V41, P355
- [22] ENERGY BAND-GAP BOWING PARAMETER IN AN ALXGA1-XN ALLOY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4540 - 4543
- [23] InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB): : L1130 - L1132
- [24] LAGRENAUDIE J, 1956, J CHIM PHYS PCB, V53, P222
- [25] Refractive index of InGaN/GaN quantum well [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 6312 - 6317
- [26] Mack MP, 1997, MRS INTERNET J N S R, V2, part. no.
- [27] Phase separation in InGaN/GaN multiple quantum wells [J]. APPLIED PHYSICS LETTERS, 1998, 72 (14) : 1730 - 1732
- [28] NAKAMURA S, 1996, JPN J APPL PHYS PT 1, V35, P74
- [29] PANKOVE JI, 1997, SEMICONDUCTORS SEMIM, V50
- [30] PASTRNAK J, 1966, PHYS STATUS SOLIDI, V14, pK5