Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy

被引：45

作者：

Ambacher, O

Brunner, D

Dimitrov, R

Stutzmann, M

Sohmer, A

Scholz, F

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3A期

关键词：

InGaN single quantum well; absorption; bandgap;

D O I：

10.1143/JJAP.37.745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photothermal deflection spectroscopy (PDS) is used to study the absorption of GaN/InGaN/GaN double heterostructures in the energy range from 0.6 to 3.8 eV. The heterostructures containing 1-77-nm-thick InGaN single quantum wells were deposited by chemical vapour deposition from organometallic precursors. They are measured to investigate the absorption coefficient, bandgap, indium concentration and fluctuation of the quantum wells. A bandgap increase of hexagonal InxGa1-xN (x approximate to 0.14) of 60 meV is observed with decreasing well thicknesses from 15 to 1 nm. The distribution of In-concentration of the InxGa1-xN layers was estimated from the slope of the absorption coefficient versus photon energy for energies below the bandgap and found to be Gaussian with a full width of half maximum of Delta x = 0.03.

引用

页码：745 / 752

页数：8

共 24 条

[1]

AMBACHER O, UNPUB J APPL PHYS

[2] Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films [J].

Angerer, H ;

Brunner, D ;

Freudenberg, F ;

Ambacher, O ;

Stutzmann, M ;

Hopler, R ;

Metzger, T ;

Born, E ;

Dollinger, G ;

Bergmaier, A ;

Karsch, S ;

Korner, HJ .

APPLIED PHYSICS LETTERS, 1997, 71 (11) :1504-1506

[3] SENSITIVE PHOTOTHERMAL DEFLECTION TECHNIQUE FOR MEASURING ABSORPTION IN OPTICALLY THIN MEDIA [J].

BOCCARA, AC ;

FOURNIER, D ;

JACKSON, W ;

AMER, NM .

OPTICS LETTERS, 1980, 5 (09) :377-379

[4] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[5]

Edgar J.H, 1994, PROPERTIES GROUP 3 N, P30

[6] OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI [J].

FREEMAN, EC ;

PAUL, W .

PHYSICAL REVIEW B, 1979, 20 (02) :716-728

[7]

HANGLEITER A, 1997, MATER RES SOC S P, V449, P641

[8]

Im JS, 1996, MRS INTERNET J N S R, V1, pU293

[9] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION [J].

JACKSON, WB ;

AMER, NM ;

BOCCARA, AC ;

FOURNIER, D .

APPLIED OPTICS, 1981, 20 (08) :1333-1344

[10] Growth and characterization of bulk InGaN films and quantum wells [J].

Keller, S ;

Keller, BP ;

Kapolnek, D ;

Abare, AC ;

Masui, H ;

Coldren, LA ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1996, 68 (22) :3147-3149

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