Atomic scale mechanisms and brittle to ductile transition at low size in silicon

被引：2

作者：

Brochard, Sandrine ^{[1
]}

El Nabi, Firas Abed ^{[1
]}

Pizzagalli, Laurent ^{[1
]}

Merabet, Amina ^{[2
]}

Texier, Michael ^{[2
]}

Tromas, Christophe ^{[1
]}

Godet, Julien ^{[1
]}

机构：

[1] Univ Poitiers, ISAE ENSMA, Dept Phys & Mecan Mat, UPR CNRS 3346,Inst Pprime, SP2MI,BP 30179, F-86962 Futuroscope, France

[2] Univ Aix Marseille, Univ Toulon, UMR CNRS 7334, IM2NP, F-13397 Marseille, France

来源：

MATERIALS TODAY-PROCEEDINGS | 2018年 / 5卷 / 06期

关键词：

brittle to ductile transition; silicon; nanowire; molecular dynamics simulations; dislocation; cavity; MOLECULAR-DYNAMICS SIMULATIONS; LARGE-STRAIN PLASTICITY; DISLOCATION NUCLEATION; INCIPIENT PLASTICITY; BENDING STRENGTH; ROOM-TEMPERATURE; SURFACE STEP; HIGH-STRESS; NANOWIRES; DEFORMATION;

D O I：

10.1016/j.matpr.2018.03.059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular dynamics (MD) simulations of silicon nanowires (NW) tensile deformation were performed. They reveal a great variety of behaviors, which are rationalized thanks to a diagram highlighting the sequences of elementary mechanisms. In particular, MD simulations show that cavity formation inside the NW can occur through dislocations interactions. To quantify the brittle/ductile character of the NWs for each tested conditions, we define a ductility parameter which is extracted from the simulation output. Its variation suggests that the brittle to ductile transition (BDT) at low size is not sharp, conversely to the well-known BDT for bulk silicon. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：14693 / 14704

页数：12

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