CMOS-integrated high-speed MSM germanium waveguide photodetector

被引：155

作者：

Assefa, Solomon ^{[1
]}

Xia, Fengnian ^{[1
]}

Bedell, Stephen W. ^{[1
]}

Zhang, Ying ^{[1
]}

Topuria, Teya ^{[2
]}

Rice, Philip M. ^{[2
]}

Vlasov, Yurii A. ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10536 USA

[2] IBM Almaden Res Ctr, San Jose, CA 95120 USA

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 05期

关键词：

HIGH-PERFORMANCE; GE; INSULATOR;

D O I：

10.1364/OE.18.004986

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 +/- 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. (C) 2010 Optical Society of America

引用

收藏

页码：4986 / 4999

页数：14

相关论文

共 28 条

[1] High performance, waveguide integrated Ge photodetectors [J].

Ahn, Donghwan ;

Hong, Ching-yin ;

Liu, Jifeng ;

Giziewicz, Wojciech ;

Beals, Mark ;

Kimerling, Lionel C. ;

Michel, Jurgen ;

Chen, Jian ;

Kartner, Franz X. .

OPTICS EXPRESS, 2007, 15 (07) :3916-3921

[2] High-performance waveguided Ge-on-SOI metal-semiconductor-metal photodetectors with novel silicon-carbon (Si:C) Schottky barrier enhancement layer [J].

Ang, Kah-Wee ;

Zhu, Shiyang ;

Yu, Mingbin ;

Lo, Guo-Qiang ;

Kwong, Dim-Lee .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (9-12) :754-756

[3]

ASSEFA S, 2008, Patent No. 12191687

[4]

ASSEFA S, 2008, Patent No. 12164580

[5]

ASSEFA S, 2009, C LAS EL CLEO

[6]

ASSEFA S, 2009, OPT FIB COMM C OFC

[7]

ASSEFA S, 2007, Patent No. 11925170

[8] Ultra-low capacitance and high speed germanium photodetectors on silicon [J].

Chen, Long ;

Lipson, Michal .

OPTICS EXPRESS, 2009, 17 (10) :7901-7906

[9] Effective dark current suppression with asymmetric MSM photodetectors in Group IV semiconductors [J].

Chui, CO ;

Okyay, AK ;

Saraswat, KC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (11) :1585-1587

[10] Ge-on-Si approaches to the detection of near-infrared light [J].

Colace, L ;

Masini, G ;

Assanto, G .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (12) :1843-1852