Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1-xN quantum wells

被引：24
作者：
Oh, E [1 ]
Sone, C [1 ]
Nam, O [1 ]
Park, H [1 ]
Park, Y [1 ]
机构：
[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 22期
关键词：
D O I：
10.1063/1.126594
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Micro-photoluminescence (PL) spectra of Si-doped GaN epilayers and three-period In0.1Ga0.9N/In0.02Ga0.98N:Si quantum-well (QW) structures were studied and compared with macro-PL spectra. The shift of the macro-PL peak with increasing Si concentration was found to be similar to that with increasing excitation density in both GaN:Si and InxGa1-xN QWs. Also, it was observed that the macro-PL intensity increased with increasing Si concentration in GaN:Si and InxGa1-xN QWs, but the micro-PL intensity was independent of doping concentration. These results indicate that the changes of PL spectra with Si doping are mainly due to the increase of carriers. (C) 2000 American Institute of Physics. [S0003-6951(00)02721-2].
引用
收藏
页码：3242 / 3244
页数：3
相关论文
共 23 条
  • [1] Amano H., 1990, MAT RES SOC EXT ABS, P165
  • [2] Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes
    Chichibu, S
    Cohen, DA
    Mack, MP
    Abare, AC
    Kozodoy, P
    Minsky, M
    Fleischer, S
    Keller, S
    Bowers, JE
    Mishra, UK
    Coldren, LA
    Clarke, DR
    DenBaars, SP
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (04) : 496 - 498
  • [3] Spatially resolved cathodoluminescence spectra of InGaN quantum wells
    Chichibu, S
    Wada, K
    Nakamura, S
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (16) : 2346 - 2348
  • [4] Luminescences from localized states in InGaN epilayers
    Chichibu, S
    Azuhata, T
    Sota, T
    Nakamura, S
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2822 - 2824
  • [5] Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells
    Cho, YH
    Song, JJ
    Keller, S
    Minsky, MS
    Hu, E
    Mishra, UK
    DenBaars, SP
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1128 - 1130
  • [6] Optical properties of doped InGaN GaN multiquantum-well structures
    Dalfors, J
    Bergman, JP
    Holtz, PO
    Sernelius, BE
    Monemar, B
    Amano, H
    Akasaki, I
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (22) : 3299 - 3301
  • [7] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry
    Gil, B
    Briot, O
    Aulombard, RL
    [J]. PHYSICAL REVIEW B, 1995, 52 (24): : 17028 - 17031
  • [8] Broadening of near-band-gap photoluminescence in n-GaN films
    Iliopoulos, E
    Doppalapudi, D
    Ng, HM
    Moustakas, TD
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (03) : 375 - 377
  • [9] Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields
    Kollmer, H
    Im, JS
    Heppel, S
    Off, J
    Scholz, F
    Hangleiter, A
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (01) : 82 - 84
  • [10] Band-gap narrowing and potential fluctuation in Si-doped GaN
    Lee, IH
    Lee, JJ
    Kung, P
    Sanchez, FJ
    Razeghi, M
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (01) : 102 - 104
123