In situ Transmission Electron Microscopy Observation of the Graphitization of Silicon Carbide Nanowires Induced by Joule Heating

被引：5

作者：

Kohno, Hideo ^{[1
]}

Mori, Yuhki ^{[1
]}

Takeda, Seiji ^{[1
]}

Ohno, Yutaka ^{[2
]}

Yonenaga, Ichiro ^{[2
]}

Ichikawa, Satoshi ^{[3
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Osaka Univ, Inst NanoSci Design, Osaka 5608531, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 05期

关键词：

D O I：

10.1143/APEX.3.055001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Joule heating of silicon carbide nanowires results in the graphitization on their surface, and finally in the transformation into heavily distorted nanotubes of carbon. This paper investigates the dynamics of the graphitization by means of in situ transmission electron microscopy. The process proceeds with three steps: evaporation of the surface oxide, formation of the surface graphene layers, and evaporation of the core silicon carbide with further heating. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 7 条

[1] Heteroepitaxial graphite on 6H-SiC(0001):: Interface formation through conduction-band electronic structure [J].