Dielectric response due to stochastic motion of pinned domain walls

被引：27

作者：

Fedorenko, AA ^{[1
]}

Mueller, V ^{[1
]}

Stepanow, S ^{[1
]}

机构：

[1] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle An Der Saale, Germany

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 22期

关键词：

D O I：

10.1103/PhysRevB.70.224104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the contribution of stochastic motion of a domain wall (DW) to the dielectric ac susceptibility for low frequencies. Using the concept of waiting time distributions, which is related to the energy landscape of the DW in a disordered medium, we derive the power-law behavior of the complex susceptibility observed recently in some ferroelectrics below Curie temperature.

引用

页码：224104 / 1

页数：5

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