High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

被引：30

作者：

Kim, Sun-Kyung ^{[1
]}

Lee, Jin Wook ^{[1
]}

Ee, Ho-Seok ^{[2
]}

Moon, Yong-Tae ^{[1
]}

Kwon, Soon-Hong ^{[2
]}

Kwon, Hoki ^{[1
]}

Park, Hong-Gyu ^{[2
]}

机构：

[1] LG Innotek, LED Div, Adv Technol Lab, Seoul 137724, South Korea

[2] Korea Univ, Dept Phys, Seoul 136701, South Korea

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 11期

关键词：

HIGH EXTRACTION EFFICIENCY; PHOTONIC-CRYSTAL; GUIDED MODES; POWER; FABRICATION; EMISSION;

D O I：

10.1364/OE.18.011025

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a highly-efficient, large-area (1x1 mm(2)) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased similar to 1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation. (C) 2010 Optical Society of America

引用

页码：11025 / 11032

页数：8

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