Hydrogenated amorphous silicon film as intrinsic passivation layer deposited at various temperatures using RF remote-PECVD technique

被引：24

作者：

Jeon, Minsung ^{[1
]}

Yoshiba, Shuhei ^{[1
]}

Kamisako, Koichi ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Elect & Informat Engn Dept, Koganei, Tokyo 1848588, Japan

来源：

CURRENT APPLIED PHYSICS | 2010年 / 10卷

关键词：

Amorphous silicon film; Passivation layer; Heterojunction solar cell; Remote-PECVD;

D O I：

10.1016/j.cap.2009.11.059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated amorphous silicon (a-SrH) thin films as passivation layer are deposited at various substrate temperatures using the remote-plasma-enhanced chemical vapor deposition method Then properties are investigated and a method for further improvement is explored The highest effective carrier lifetime as 850 mu s is obtained at optimal deposition temperature of 250 degrees C Moreover, the further improvement is found after thermal annealing treatment at 250 degrees C for 20 s A combination of the optimal deposition conditions for a-Si H film and annealing treatment provides excellent surface and bulk passivation (C) 2009 Elsevier B.V. All rights reserved

引用

页码：S237 / S240

页数：4

共 4 条

[1] Hydrogenated Amorphous Silicon Thin Films as Passivation Layers Deposited by Microwave Remote-PECVD for Heterojunction Solar Cells
Jeon, Min-sung
Kamisako, Koichi
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2009, 10 (03) : 75 - 79
[2] Characterization of the Intrinsic Amorphous Silicon (a-Si:H) Layer Prepared by Remote-PECVD for Heterojunction Solar Cells: Effect of the Annealing Treatment on Multi-crystalline Si Wafer
Jeon, Minsung
Kawachi, Kazuki
Supajariyawichai, Piyasak
Dhamrin, Marwan
Kamisako, Koichi
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2008, 6 : 124 - 129
[3] Intrinsic Amorphous Silicon (a-Si:H) Thin Film Prepared by Using Remote Plasma Chemical Vapor Deposition Method and Used as a Passivation Layer for a Heterojunction Solar Cell
Jeon, Minsung
Yoshiba, Shuhei
Kamisako, Koichi
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (01) : 194 - 199
[4] Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD
Ge, Jia
Tang, Muzhi
Wong, Johnson
Stangl, Rolf
Zhang, Zhenhao
Dippell, Torsten
Doerr, Manfred
Hohn, Oliver
Huber, Marco
Wohlfart, Peter
Aberle, Armin G.
Mueller, Thomas
IEEE JOURNAL OF PHOTOVOLTAICS, 2015, 5 (03): : 705 - 710

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