Macromodeling of the Memristor in SPICE

被引：191
|
作者：
Rak, Adam [1 ]
Cserey, Gyoergy [2 ]
机构：
[1] Pazmany Peter Catholic Univ, Fac Informat Technol, H-1083 Budapest, Hungary
[2] Pazmany Peter Catholic Univ, Hungarian Acad Sci, Semmelweis Univ, Infob & Neurobiol Plast Res Grp, H-1083 Budapest, Hungary
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2010年 / 29卷 / 04期
基金：
匈牙利科学研究基金会;
关键词：
Macromodel; memristor; SPICE; ELEMENT;
D O I：
10.1109/TCAD.2010.2042900
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, we present a new simulation program with integrated circuit emphasis macromodel of the recently physically implemented memristor. This macromodel could be a powerful tool for electrical engineers to design and experiment new circuits with memristors. Our simulation results show similar behavior to the already published measurements of the physical implementation. Our approach provides a solution for the modeling of boundary conditions following exactly the published mathematical model of HP Labs. The functionality of our macromodel is demonstrated with computer simulations. The source code of our macromodel is provided.
引用
收藏
页码：632 / 636
页数：5
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