Electrooptical Modulating Device Based on a CMOS-Compatible α-Si:H/α-SiCN Multistack Waveguide

被引：13
|
作者：
Rao, Sandro [1 ]
Della Corte, Francesco G. [1 ]
Summonte, Caterina [2 ]
Suriano, Francesco [1 ]
机构：
[1] Mediterranea Univ Reggio Calabria, Dept Informat Sci Math Elect & Transportat, I-89131 Reggio Di Calabria, Italy
[2] CNR, Inst Microelect & Microsyst, Unit Bologna, I-40129 Bologna, Italy
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2010年 / 16卷 / 01期
关键词：
Amorphous materials; CMOS ICs; electrooptic modulation; waveguides;
D O I：
10.1109/JSTQE.2009.2025604
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report results on a field-effect-induced light modulation at lambda = 1.55 mu m in a high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (alpha-Si:H) technology, and it is suitable for monolithic integration in a CMOS IC. The device exploits the free-carrier optical absorption electrically induced in the semiconductor core waveguide. The amorphous silicon waveguiding layer contains several thin dielectric films of amorphous silicon carbonitride (alpha-SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the ON state.
引用
收藏
页码：173 / 178
页数：6
相关论文
共 50 条
  • [41] CMOS-compatible high efficiency double-etched apodized waveguide grating coupler
    Li, Chao
    Zhang, Huijuan
    Yu, Mingbin
    Lo, G. Q.
    OPTICS EXPRESS, 2013, 21 (07): : 7868 - 7874
  • [42] Integrated NiSi waveguide heaters for CMOS-compatible silicon thermo-optic devices
    Van Campenhout, Joris
    Green, William M. J.
    Assefa, Solomon
    Vlasov, Yurii A.
    OPTICS LETTERS, 2010, 35 (07) : 1013 - 1015
  • [43] CMOS-compatible device for fluid density measurements fabricated by sacrificial aluminum etching
    Dept. of Solid State Electronics, Chalmers Univ. of Technol., S-412 96, Göteborg, Sweden
    不详
    Sens Actuators A Phys, 3 (243-251):
  • [44] Fabrication of a CMOS-Compatible Surface Acoustic Wave Device for Application in Pathogen Sensing
    Ten, S. T.
    Hashim, U.
    Malek, F.
    Liu, W. W.
    Foo, K. L.
    Voon, C. H.
    Wee, F. H.
    Lee, Y. S.
    Hisham, H.
    Ten, S. T.
    Sudin, A.
    Humaira, M. S. Nur
    2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE), 2014, : 384 - 387
  • [45] CMOS-Compatible Multi-Layered Waveguide Platform for Silicon Hybrid Integrated Circuits
    Luo, Xianshu
    Tu, Xiaoguang
    Jia, Lianxi
    Huang, Ying
    Li, Chao
    Zhou, Haifeng
    Lim, Eu-Jin
    Liow, Tsung-Yang
    Yu, Mingbin
    Lo, Guo-Qiang
    2016 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN), 2016,
  • [46] CMOS-Compatible Hybrid Plasmonic Waveguide for Subwavelength Light Confinement and On-Chip Integration
    Kim, Jin Tae
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (04) : 206 - 208
  • [47] A CMOS-Compatible, Low-Loss, and Low-Crosstalk Silicon Waveguide Crossing
    Zhang, Yi
    Yang, Shuyu
    Lim, Andy Eu-Jin
    Lo, Guo-Qiang
    Galland, Christophe
    Baehr-Jones, Tom
    Hochberg, Michael
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (05) : 422 - 425
  • [48] A CMOS-compatible device for fluid density measurements fabricated by sacrificial aluminium etching
    Westberg, D
    Paul, O
    Andersson, GI
    Baltes, H
    SENSORS AND ACTUATORS A-PHYSICAL, 1999, 73 (03) : 243 - 251
  • [49] Controlled integration of InP nanoislands with CMOS-compatible Si using nanoheteroepitaxy approach
    Kamath, Anagha
    Ryzhak, Diana
    Rodrigues, Adriana
    Kafi, Navid
    Golz, Christian
    Spirito, Davide
    Skibitzki, Oliver
    Persichetti, Luca
    Schmidbauer, Martin
    Hatami, Fariba
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 182
  • [50] MODELING AND CHARACTERIZATION OF CMOS-COMPATIBLE HIGH-VOLTAGE DEVICE STRUCTURES.
    Parpia, Zahir
    Salama, C.Andre T.
    Hadaway, Robert A.
    IEEE Transactions on Electron Devices, 1987, ED-34 (11)
12345