Electrooptical Modulating Device Based on a CMOS-Compatible α-Si:H/α-SiCN Multistack Waveguide

被引：13
|
作者：
Rao, Sandro [1 ]
Della Corte, Francesco G. [1 ]
Summonte, Caterina [2 ]
Suriano, Francesco [1 ]
机构：
[1] Mediterranea Univ Reggio Calabria, Dept Informat Sci Math Elect & Transportat, I-89131 Reggio Di Calabria, Italy
[2] CNR, Inst Microelect & Microsyst, Unit Bologna, I-40129 Bologna, Italy
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2010年 / 16卷 / 01期
关键词：
Amorphous materials; CMOS ICs; electrooptic modulation; waveguides;
D O I：
10.1109/JSTQE.2009.2025604
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report results on a field-effect-induced light modulation at lambda = 1.55 mu m in a high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (alpha-Si:H) technology, and it is suitable for monolithic integration in a CMOS IC. The device exploits the free-carrier optical absorption electrically induced in the semiconductor core waveguide. The amorphous silicon waveguiding layer contains several thin dielectric films of amorphous silicon carbonitride (alpha-SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the ON state.
引用
收藏
页码：173 / 178
页数：6
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