ZnSe-based white LEDs

被引:76
作者
Katayama, K [1 ]
Matsubara, H [1 ]
Nakanishi, F [1 ]
Nakamura, T [1 ]
Doi, H [1 ]
Saegusa, A [1 ]
Mitsui, T [1 ]
Matsuoka, T [1 ]
Irikura, M [1 ]
Takebe, T [1 ]
Nishine, S [1 ]
Shirakawa, T [1 ]
机构
[1] Sumitomo Elect Ind Ltd, Basic High Technol Labs, Konohana Ku, Osaka 5540024, Japan
关键词
ZnSe; white; LED; self-activated; conductive; photoluminescence;
D O I
10.1016/S0022-0248(00)00275-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The first phosphor-free white LED based on II-IV compound materials is demonstrated. Our device utilizes a phenomenon unique to ZnSe homoepitaxy, where a portion of the main greenish-blue emission from the active layer of a pn junction diode is absorbed by the conductive substrate which in turn gives off an intense broad-band yellow emission centered around 585 nm by photoluminescence. These two emission bands combine to give a spectrum which appears while to the naked eye. A typical ZnSe-based white LED lamp exhibits a color temperature of approximately 3400 K with a CRI (color rendering index) of 68. The optical output power and operating voltage of such a device at a forward current of 20 mA is 2.0 mW and 2.7 V, respectively. The luminous efficiency estimated from these results is 10.41 m/W, which is comparable to the incandescent lamp as well as the commercial InGaN-based white LED. Device lifetimes (half-life) have exceeded 800 h at 20 degrees C. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1064 / 1070
页数:7
相关论文
共 9 条
  • [1] OPTICAL-ABSORPTION EDGE IN DOPED AND UNDOPED ZNSE CRYSTALS
    BAILLOU, J
    DAUNAY, J
    BUGNET, P
    DAUNAY, J
    AUZARY, C
    POINDESSAULT, R
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (03) : 295 - 300
  • [2] Kinetic model for degradation of light-emitting diodes
    Chuang, SL
    Ishibashi, A
    Kijima, S
    Nakayama, N
    Ukita, M
    Taniguchi, S
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (06) : 970 - 979
  • [3] Doi H, 1998, BLUE LASER AND LIGHT EMITTING DIODES II, P385
  • [4] Growth of 1" diameter ZnSe single crystal by the rotational chemical vapor transport method
    Fujiwara, S
    Namikawa, Y
    Kotani, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1999, 205 (1-2) : 43 - 49
  • [5] (100) DARK LINE DEFECT IN II-VI BLUE-GREEN LIGHT EMITTERS
    GUHA, S
    CHENG, H
    HAASE, MA
    DEPUYDT, JM
    QIU, J
    WU, BJ
    HOFLER, GE
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (07) : 801 - 803
  • [6] Jones G., 1974, Journal of Luminescence, V9, P389, DOI 10.1016/0022-2313(74)90032-5
  • [7] Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates
    Katayama, K
    Yao, H
    Nakanishi, F
    Doi, H
    Saegusa, A
    Okuda, N
    Yamada, T
    Matsubara, H
    Irikura, M
    Matsuoka, T
    Takebe, T
    Nishine, S
    Shirakawa, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (01) : 102 - 104
  • [8] Makai T., 1999, Oyo Buturi, V68, P152
  • [9] InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates
    Mukai, T
    Takekawa, K
    Nakamura, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (7B): : L839 - L841