Low temperature growth interface for growing Boron Monophosphide on Si substrates

被引：11

作者：

Nishimura, S ^{[1
]}

Terashima, K ^{[1
]}

机构：

[1] Shonan Inst Technol, Fujisawa, Kanagawa 2518511, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 159卷

关键词：

BP; GaN; Si; light emitting devices; epitaxial growth;

D O I：

10.1016/S0169-4332(00)00086-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Boron monophosphide (BP) thin layer has been grown on Si(100) surface by using low temperature growth process. The low temperature layer is an aggregate of small crystalline particles with small inclined angles to Si(100). This layer provides nucleation centers for growing BP layer. To elucidate the effect of BP layer, GaN layer was grown on BP/Si. It has been found that cubic GaN has been successfully grown on BP laver. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：288 / 291

页数：4