Raman scattering of nanoporous semiconductors

被引：49
作者：
Irmer, Gert [1 ]
机构：
[1] Tech Univ Bergakad Freiberg, Inst Theoret Phys, D-09596 Freiberg, Germany
来源：
JOURNAL OF RAMAN SPECTROSCOPY | 2007年 / 38卷 / 06期
关键词：
porous semiconductors; optical phonons; surface-related phonons; plasmons;
D O I：
10.1002/jrs.1703
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
The application of Raman scattering for characterizing porous semiconductors is reviewed. For structural units of only a few nanometers in size, as observed in por-Si or por-Ge, phonon confinement effects appear that can be used for size determinations. In polar porous semiconductors, surface-related phonons (Frdhlich modes) between the TO and LO phonons appear. These surface phonons couple with the plasmons of free charge carriers in the porous medium. Examples are given of porous layers on III-V semiconductors in which Raman scattering is used to study charge carrier depletion. For theoretical treatment, the effective medium theory is used, taking into account the morphology with parallel pores or nanocolumns with radii down to a few tens of nanometers. Copyright (c) 2007 John Wiley & Sons, Ltd.
引用
收藏
页码：634 / 646
页数：13
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