Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

被引：50

作者：

Li, Xueqing ^{[1
]}

Ma, Kaisheng ^{[1
]}

George, Sumitha ^{[1
]}

Khwa, Win-San ^{[2
]}

Sampson, John ^{[1
]}

Gupta, Sumeet ^{[1
]}

Liu, Yongpan ^{[3
]}

Chang, Meng-Fan ^{[2
]}

Datta, Suman ^{[4
]}

Narayanan, Vijaykrishnan ^{[1
]}

机构：

[1] Penn State Univ, Sch Elect Engn & Comp Sci, University Pk, PA 16802 USA

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[3] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

[4] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 07期

关键词：

Ferroelectric FET (FeFET); nonvolatile computing; nonvolatile SRAM (nvSRAM); power gating; SRAM; NEGATIVE CAPACITANCE; CELL;

D O I：

10.1109/TED.2017.2707664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonvolatile SRAM (nvSRAM) has emerged as a promising approach to reducing the standby energy consumption by storing the state into an in situ nonvolatile memory element and shutting down the power supply. Existing nvSRAM solutions based on a nonvolatile backup in magnetic tunnel junction and ReRAM, however, are costly in backup and restore energy due to static current. This cost results in a long breakeven time (BET) when compared with a lowered voltage standby volatile SRAM. This brief proposes an nvSRAM based on ferroelectric FETs (FeFETs) that are capable of fully avoiding such static current. A simple differential backup and restore circuitry is proposed, achieving sub-fJ/cell total energy per backup and restore operation at the 10-nm node. This leads to hundreds of times BET improvement over existing ReRAM nvSRAM solutions. This nvSRAM also indicates the future FeFET design trends for such memory-logic synergy.

引用

页码：3037 / 3040

页数：4

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