CONDUCTIVITY INTERFACE PROBLEMS. PART I: SMALL PERTURBATIONS OF AN INTERFACE

被引:29
作者
Ammari, Habib [1 ,2 ]
Kang, Hyeonbae [3 ,4 ]
Lim, Mikyoung [5 ]
Zribi, Habib [1 ,2 ]
机构
[1] CNRS, Ctr Math Appl, UMR 7641, F-91128 Palaiseau, France
[2] Ecole Polytech, F-91128 Palaiseau, France
[3] Seoul Natl Univ, Dept Math Sci, Seoul 151747, South Korea
[4] Seoul Natl Univ, RIM, Seoul 151747, South Korea
[5] Colorado State Univ, Dept Math, Ft Collins, CO 80523 USA
关键词
Small perturbations; interface problem; full asymptotic expansions; boundary integral method; SMALL-DIAMETER; LEVEL-SET; INHOMOGENEITIES; IDENTIFICATION; POTENTIALS;
D O I
10.1090/S0002-9947-09-04842-9
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
We derive high-order terms in the asymptotic expansions of boundary perturbations of steady-state voltage potentials resulting from small perturbations of the shape of a conductivity inclusion with C-2-boundary. Our derivation is rigorous and based on layer potential techniques. The asymptotic expansion in this paper is valid for C-1-perturbations and inclusions with extreme conductivities. It extends those already derived for small volume conductivity inclusions and leads us to very effective algorithms for determining lower-order Fourier coefficients of the shape perturbation of the inclusion based on boundary measurements. We perform some numerical experiments using the algorithm to test its effectiveness.
引用
收藏
页码:2435 / 2449
页数:15
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