Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts

被引：0

作者：

Tsubata, Ryohei ^{[1
]}

Gotoh, Kazuhiro ^{[1
]}

Kurokawa, Yasuyoshi ^{[1
]}

Usami, Noritaka ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Proc Engn, Nagoya, Aichi, Japan

来源：

2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年

关键词：

poly-crystalline silicon on oxide junction; silicon oxide; silicon nanocrystals; passivation; carrier transport; METAL CONTACTS; SI; RESISTIVITY; POLYSILICON; JUNCTIONS; BULK;

D O I：

10.1109/pvsc45281.2020.9300609

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We apply silicon nanocrystals as a carrier transport route in silicon oxide for polycrystalline silicon on oxide (POLO) junctions. The Si nanocrystals are formed in silicon oxide by deposition of hydrogenated amorphous silicon oxide with different oxygen concentration and subsequent annealing. From cross-sectional transmission electron microscopy (TEM) images, the Si nanocrystals are observed for the sample at annealing temperature of 750 degrees C. The highest average effective lifetime of about 630 mu s and contact resistivity of 25.5 m Omega.cm are obtained before hydrogenation process.

引用

页码：969 / 972

页数：4

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