Boron isotope distribution in laser deposited thin films of B4C

被引：0

作者：

Manoravi, P. ^{[1
]}

Joseph, M.

Balamurugan, A. K.

Rajagopalan, S.

Ramamurthy, P.

机构：

[1] Indira Gandhi Ctr Atom Res, Div Mat Sci, Fuel Chem Div, Kalpakkam 603102, Tamil Nadu, India

[2] Univ Madras, Natl Ctr Ultrafast Proc, Madras, Tamil Nadu, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2007年 / 45卷 / 02期

关键词：

B4C thin film; pulsed laser deposition; isotope enrichment;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Isotope enrichment in laser-ablated plume is an interesting phenomenon. In this work, we have compared the boron isotope distribution present in thin films of B4C that are formed by pulsed laser deposition using nanosecond (ns) and picosecond (ps) pulse Nd-YAG lasers. With the ns laser beam, in the plume we could observe an isotope ratio of B-10/B-11 as high as 0.9, but in the film we could hardly see any enrichment. With ps pulsed laser, the maximum value obtained for the B-10/B-11 ratio is about 0.29 in the film.

引用

页码：131 / 134

页数：4

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