Relationship between the electronic structure of passive films and the susceptibility to pitting corrosion of stainless steels.

被引:11
作者
Le Xuan, Q [1 ]
Rondot, B [1 ]
Belo, MD [1 ]
机构
[1] CNRS, Ctr Etud Chim Met, F-94407 Vitry, France
来源
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 1998年 / 23卷 / 04期
关键词
D O I
10.1016/S0151-9107(98)80115-3
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The passive films formed on 316L stainless steel in various NaCl solutions have hem investigated by capacitance measurements (Mott-Schottky study). Fitting parameters have been determined using the galvanokinetic polarisation method. The obtained results reveal the existence of a shallow and a deep donor level localised in the band gap of the semiconducting oxide film. These energy levels are due to iron ions in the tetrahedral and octahedral positions. It also appears that the participation of the deep donor level affects the electric field. The study developed allows us to compare characteristic parameters of the electronic structure of the passive film to those related to pitting susceptibility.
引用
收藏
页码:607 / 615
页数:9
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