1/f noise in polycrystalline silicon thin films

被引：15

作者：

Michelutti, L ^{[1
]}

机构：

[1] ENSERG, INP Grenoble, LPCS, CNRS,UMR 5531, F-38016 Grenoble 1, France

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.57.12360

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, an approach is presented to explain 1/f noise in polycrystalline silicon thin films. This approach is based on the finding that the grain boundary has a leading part in the generation of noise. In this context, lif noise is explained as a thermal noise due to dielectric losses in the grain boundaries, and modeled using physical parameters linked with the quality of the material at the grain boundary. Experimental results on highly boron-doped polysilicon resistors are presented. In order to support the thermal origin of 1/f noise in our samples, results on another simple device that generates 1/f noise are presented. [S0163-1829(98)04519-6].

引用

页码：12360 / 12363

页数：4

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