Embedded DC-DC voltage down converter for low-power VLSI chip

被引：0

作者：

Zhou, Qianneng ^{[1
]}

Lai, Fengchang ^{[1
]}

Yu, Mingyan ^{[1
]}

机构：

[1] Harbin Inst Technol, Microelect Ctr, Harbin 150006, Peoples R China

来源：

2006 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS | 2006年

关键词：

CMOS; forward-biased source-to-bulk; reference voltage generator; voltage down converter (VDC);

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A fully integrated DC-DC voltage down converter (VDC) is proposed. Employing a bias voltage generator and a PMOS pass device with forward-biased source-to-bulk circuit, the architecture of the proposed VDC is simple and can be fabricated by conventional CMOS technology. VDC converts 3.3V to lower voltage so that the internal circuits of VLSI are used. In this paper, 1.8V is used as an experiment vehicle. For a given size of PMOS pass device, the circuit achieves approximately a large output current improvement over its nonforward-biased state. The output voltage of VDC has characteristics such as a temperature dependency of only 0.543mV/C-0 and a voltage deviation within +/- 0.42% for +/- 10% variation of supply voltage. The output voltage is stabilized with +/- 3.8mV for load current varying from 0 to 100mA.

引用

页码：670 / +

页数：2

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