Temperature dependence of photoluminescence characteristics of excitons in stacked quantum dots and quantum dot chains

被引:10
|
作者
Kojima, Osamu [1 ]
Nakatani, Hiroaki [1 ]
Kita, Takashi [1 ]
Wada, Osamu [1 ]
Akahane, Kouichi [2 ]
机构
[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[2] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan
关键词
RESOLVED OPTICAL CHARACTERIZATION; 1.3; MU-M;
D O I
10.1063/1.3366711
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the effects of temperature on the photoluminescence (PL) characteristics of excitons in ordinary stacked quantum dots (QDs) and QD chains in which QDs are interconnected along the growth direction. While the temperature dependence of the PL intensity of both samples is similar, that of the PL decay time is different. In addition, the PL decay times of both samples monitored at 150 K clearly depend on the detection energy. This result is attributed to lateral QD coupling. From these results, in ordinary stacked QDs, the exciton transfer owing to the lateral coupling is the only cause of the increase in the PL decay time. On the other hand, in QD chains, the interconnection along the chain direction as well as the lateral coupling is considered to cause the change in the PL characteristics and induce the extremely long exciton lifetime. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3366711]
引用
收藏
页数:4
相关论文
共 50 条
  • [1] On the temperature dependence of silicon quantum dot photoluminescence
    Nagornykh S.N.
    Pavlenkov V.I.
    Mikhaylov A.N.
    Belov A.I.
    Burdov V.A.
    Krasilnikova L.V.
    Kryzhkov D.I.
    Tetelbaum D.I.
    Russian Microelectronics, 2014, 43 (08) : 575 - 580
  • [2] INTRABAND RELAXATION OF PHOTOEXCITED CARRIERS IN MULTIPLE STACKED QUANTUM DOTS AND QUANTUM DOT CHAINS
    Kojima, Osamu
    Mamizuka, Masataka
    Kita, Takashi
    Wada, Osamu
    Akahane, Kouichi
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010,
  • [3] Temperature dependence of photoluminescence in silicon quantum dots
    Wen, Xiaoming
    Van Dao, Lap
    Hannaford, Peter
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (12) : 3573 - 3578
  • [4] Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chains
    Hakkarainen, T. V.
    Schramm, A.
    Luna, E.
    Tommila, J.
    Guina, M.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 470 - 474
  • [5] Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells
    Ota, K
    Usami, N
    Shiraki, Y
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 1998, 2 (1-4): : 573 - 577
  • [6] Temperature dependence of InP/GaInP quantum dot photoluminescence
    Beirne, GJ
    Farrell, IL
    Grogan, CM
    Connolly, JO
    O'Connor, GM
    Glynn, TJ
    Thomas, KK
    Lambkin, JD
    MICROELECTRONIC ENGINEERING, 2000, 51-2 : 73 - 78
  • [7] Analytical temperature dependence of the photoluminescence of semiconductor quantum dots
    Biryukov, D. Yu
    Zatsepin, A. F.
    PHYSICS OF THE SOLID STATE, 2014, 56 (03) : 635 - 638
  • [8] Analytical temperature dependence of the photoluminescence of semiconductor quantum dots
    D. Yu. Biryukov
    A. F. Zatsepin
    Physics of the Solid State, 2014, 56 : 635 - 638
  • [9] Temperature dependence of the photoluminescence of InP/ZnS quantum dots
    Narayanaswamy, Arun
    Feiner, L. F.
    van der Zaag, P. J.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (17): : 6775 - 6780
  • [10] Growth and temperature dependent photoluminescence of InGaAs quantum dot chains
    Yang, Haeyeon
    Kim, Dong-Jun
    Colton, John S.
    Park, Tyler
    Meyer, David
    Jones, Aaron M.
    Thalman, Scott
    Smith, Dallas
    Clark, Ken
    Brown, Steve
    APPLIED SURFACE SCIENCE, 2014, 296 : 8 - 14