Design of a 240-GHz LNA in 0.13 μm SiGe BiCMOS Technology

被引：0
|
作者：
Najmussadat, Md [1 ]
Ahamed, Raju [1 ]
Varonen, Mikko [2 ]
Parveg, Dristy [2 ]
Tawfik, Yehia [1 ]
Halonen, Kari A., I [1 ]
机构：
[1] Aalto Univ, Dept Elect & Nanoengn, Espoo, Finland
[2] VTT Tech Res Ctr Finland Ltd, Espoo, Finland
来源：
2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2021年
基金：
芬兰科学院;
关键词：
Low Noise Amplifier (LNA); BiCMOS; SiGe; millimeter-wave; MMIC; AMPLIFIER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a seven stage low noise amplifier (LNA) in a 0.13 mu m SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm(2).
引用
收藏
页码：17 / 20
页数：4
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