Characteristics of gold/cadmium sulfide nanowire Schottky diodes

被引：19

作者：

Guduru, Sai ^{[1
]}

Singh, Vijay P. ^{[1
]}

Rajaputra, Suresh ^{[1
]}

Mishra, Shounak ^{[1
]}

Mangu, Raghu ^{[1
]}

Omer, Ingrid St. ^{[1
]}

机构：

[1] Univ Kentucky, Dept Elect & Comp Engn, CeNSE, Lexington, KY 40506 USA

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 07期

关键词：

Nanowire; Schottky diode; Anodic aluminum oxide; Cadmium sulfide; Electro-deposition; ELECTRICAL CHARACTERIZATION; CUINSE2; CDTE;

D O I：

10.1016/j.tsf.2009.09.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Schottky diode junctions were formed between nanowires of cadmium sulfide and nanowires of gold, through sequential cathodic electrodeposition into the pores of anodized aluminum oxide (AAO) templates. Lengths of CdS and Au nanowires were 100-500 nm and 300-400 nm respectively, while the diameter was 30 nm, each. Analysis of Schottky diodes yielded an effective reverse saturation current (J(o)), of 0.32 mA/cm(2) and an effective diode ideality factor (A) of 8.1 in the dark. Corresponding values under one sun illumination were, J(o) = 0.92 mA/cm(2) and A = 10.0. Dominant junction current mechanisms are thought to be tunneling and/or interface state recombination. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1809 / 1814

页数：6

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