Laser-Assisted Simulation of Transient Radiation Effects in Heterostructure Components Based on AIIIBV Semiconductor Compounds

被引：5

作者：

Gromov, D. V. ^{[1
]}

Maltsev, P. P. ^{[2
]}

Polevich, S. A. ^{[3
]}

机构：

[1] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

[2] Russian Acad Sci, Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia

[3] ENPO Specialized Electron Syst, Moscow 115409, Russia

来源：

SEMICONDUCTORS | 2016年 / 50卷 / 02期

关键词：

GaAs; Laser Radiation; Ionize Radiation; IIIB Versus; Dose Power;

D O I：

10.1134/S1063782616020093

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possibility of the simulation of transient radiation effects using laser radiation in microwave heterostructure elements based on A(III)B(V) semiconductor compounds is studied. The results of the laser simulation of transient radiation effects in pseudomorphous high-electron mobility transistors (pHEMTs) based on AlGaAs/InGaAs/GaAs heterostructures are reported. It is shown that, for the adequate simulation of transient effects in devices on GaAs substrates, one should use laser radiation with a wavelength of lambda = 880-900 nm taking into account the dominant mechanisms of ionization in the transistor regions.

引用

页码：222 / 227

页数：6

共 10 条

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Astvatsatur'yan E. R., 1992, RAD EFFECTS GAAS DEV

[2]

Chukov G. V., 2014, P 24 INT C MICR TEL, V2, P864

[3] Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: Experiment and model [J].