Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

被引：31
作者：
Laube, J. [1 ]
Nuebling, D. [1 ]
Beh, H. [1 ]
Gutsch, S. [1 ]
Hiller, D. [1 ]
Zacharias, M. [1 ]
机构：
[1] Univ Freiburg, Dept Microsyst Engn IMTEK, Lab Nanotechnol, Georges Koehler Allee 103, D-79110 Freiburg, Germany
来源：
THIN SOLID FILMS | 2016年 / 603卷
关键词：
Atomic layer deposition; Zinc oxide; Temperature effect; Annealing atmosphere; THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; ANNEALING TEMPERATURE; SURFACE-ROUGHNESS;
D O I：
10.1016/j.tsf.2016.02.060
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：377 / 381
页数：5
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