A Fully Integrated Front-End MMIC Based on GaN Doherty Power Amplifier for Mm-Wave 5G

被引：1

作者：

Guo, Runnan ^{[1
,2
]}

Peng, Chenrui ^{[1
]}

Liu, Hao ^{[1
]}

Feng, Yingfan ^{[1
]}

Yin, Zheng ^{[1
]}

Tao, Hongqi ^{[1
,2
,3
]}

机构：

[1] Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China

[2] China Elect Technol Grp Corp, Acad Elect & Informat Technol, Beijing 100041, Peoples R China

[3] Sci & Technol Monolith Integrated & Modules Lab, Nanjing 210016, Peoples R China

来源：

2022 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT) | 2022年

关键词：

D O I：

10.1109/ICMMT55580.2022.10023275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 26 GHz GaN Doherty amplifier MMIC with high 8dB back-off efficiency and simplified load modulation network, and a fully integrated RF front-end MMIC based on this Doherty PA are reported in this paper for mm -wave 5G application. The individual Doherty PA achieves up to 34% and 27% PAE at saturated and 8dB back-off respectively. And in the RF front-end MMIC, there are still PAE of 26"/0*Sat. and 24.7/(48dB-back-off PAE. The whole RF front-end MMIC could provide more than 35dBm peak output power for transmit, and 18dB linear gain, 3.6dB noise figure for receive in 24 similar to 28GHz. The chip sizes of Doherty PA and front-end MMIC are 3.0mm X 1.6mm and 3.0mm X 2.4mm

引用

页数：3

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