Analysis of PowerMOSFET chips failed in thermal instability

被引：5

作者：

Castellazzi, A

Schwarzbauer, H

Schmitt-Landsledel, D

机构：

[1] Tech Univ Munich, Inst Phys Electrotechnol, D-80333 Munich, Germany

[2] Siemens Ag, D-81730 Munich, Germany

[3] Tech Univ Munich, Inst Tech Elect, D-80333 Munich, Germany

来源：

MICROELECTRONICS RELIABILITY | 2004年 / 44卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2004.07.029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent developments in power electronics foresee the extensive use of new-generation low-voltage PowerMOSFETs also in the thermally unstable portion of their transfer-characteristic. In such conditions, current crowding phenomena and hot-spots are formed, which can initiate degradation of the devices and eventually lead to their catastrophic failure. In this work, basing on the analysis of the cross-section of a failed chip, an interpretation of the evolution of the failure mechanism is presented. In particular, the conditions which characterise and define the failure itself are identified (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1419 / 1424

页数：6