The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics

被引：5

作者：

Kobayashi, Masaharu ^{[1
]}

Thareja, Gaurav ^{[1
]}

Sun, Yun ^{[2
]}

Goel, Niti ^{[3
]}

Garner, Mike ^{[4
]}

Tsai, Wilman ^{[3
]}

Pianetta, Piero ^{[1
,2
]}

Nishi, Yoshio ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Liner Accelerator Ctr, Stanford Synchrotron Radiat Lab, Menlo Pk, CA 94305 USA

[3] SEMATECH, Austin, TX 78741 USA

[4] Intel Corp, Santa Clara, CA 95052 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 14期

关键词：

aluminium compounds; gallium arsenide; III-V semiconductors; indium compounds; internal stresses; lattice constants; photoluminescence; semiconductor quantum wells; X-ray diffraction; GATE STACK; INGAAS; TRANSISTOR; SILICON; VOLTAGE;

D O I：

10.1063/1.3379024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the surface passivation with ex situ wet clean as well as insertion of an III-V in situ grown interlayer, on the HfO2/In0.52Al0.48As interface characteristics was investigated with capacitance/conductance measurements, and synchrotron radiation photoemission spectroscopy A very thin aluminum oxide passivation layer grown after In0.52Al0.48As surface clean improves the In0.52Al0.48As metal-oxide-semiconductor characteristics compared to native oxide covered interface, giving an interface state density (D-it) 3.8)x 10(12) cm(-2) eV(-1) at 0.31 eV from conduction band edge. Furthermore, insertion of a thin In0. 53Ga0.47As cap layer effectively prevented Al oxidation further improving electrical properties, such as frequency dispersion, hysteresis, (2.7)x 10(12) cm(-2) eV(-1)) and capacitive equivalent oxide thickness. (c) 2010 American Institute of Physics.

引用

页数：3

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