Wet sulfur passivation of GaSb(100) surface for optoelectronic applications

被引：21

作者：

Kunitsyna, E. V. ^{[1
]}

L'vova, T. V. ^{[1
]}

Dunaevskii, M. S. ^{[1
]}

Terent'ev, Ya. V. ^{[1
]}

Semenov, A. N. ^{[1
]}

Solov'ev, V. A. ^{[1
]}

Meltser, B. Ya. ^{[1
]}

Ivanov, S. V. ^{[1
]}

Yakovlev, Yu. P. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst RAS, St Petersburg 194021, Russia

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 18期

基金：

俄罗斯基础研究基金会;

关键词：

GaSb; Passivation; Annealing; Photoluminescence; AFM; LPE; MBE;

D O I：

10.1016/j.apsusc.2010.03.027

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A comparative analysis of the properties of the non-passivated and S-passivated GaSb(1 0 0) surfaces has been performed through PL, AFM and RHEED characterization. The samples treated with a 1 M Na2S aqueous solution demonstrate an increase in the 5 K PL intensity. According to AFM data, the annealing of the S-passivated GaSb(1 0 0) leads to the formation of the clean flat (1 0 0) surface. Moreover, after annealing the PL intensity of the S-passivated GaSb(1 0 0) surfaces decreases by 20%, whereas for the non-passivated samples it drops by more than a factor of 4. The method of wet sulfur passivation has shown great effectiveness in pre-epitaxial processing for LPE and MBE growth of the GaSb-related materials for optoelectronics. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：5644 / 5649

页数：6