Wet sulfur passivation of GaSb(100) surface for optoelectronic applications

被引：21
|
作者：
Kunitsyna, E. V. [1 ]
L'vova, T. V. [1 ]
Dunaevskii, M. S. [1 ]
Terent'ev, Ya. V. [1 ]
Semenov, A. N. [1 ]
Solov'ev, V. A. [1 ]
Meltser, B. Ya. [1 ]
Ivanov, S. V. [1 ]
Yakovlev, Yu. P. [1 ]
机构：
[1] AF Ioffe Phys Tech Inst RAS, St Petersburg 194021, Russia
来源：
APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 18期
基金：
俄罗斯基础研究基金会;
关键词：
GaSb; Passivation; Annealing; Photoluminescence; AFM; LPE; MBE;
D O I：
10.1016/j.apsusc.2010.03.027
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A comparative analysis of the properties of the non-passivated and S-passivated GaSb(1 0 0) surfaces has been performed through PL, AFM and RHEED characterization. The samples treated with a 1 M Na2S aqueous solution demonstrate an increase in the 5 K PL intensity. According to AFM data, the annealing of the S-passivated GaSb(1 0 0) leads to the formation of the clean flat (1 0 0) surface. Moreover, after annealing the PL intensity of the S-passivated GaSb(1 0 0) surfaces decreases by 20%, whereas for the non-passivated samples it drops by more than a factor of 4. The method of wet sulfur passivation has shown great effectiveness in pre-epitaxial processing for LPE and MBE growth of the GaSb-related materials for optoelectronics. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：5644 / 5649
页数：6
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