Effect of doping on structural and luminescence properties of AlN nanowires

被引：12
作者：
Aghdaie, A. [1 ]
Haratizadeh, H. [1 ]
Mousavi, S. H. [1 ,2 ]
Mohammadi, S. A. Jafari [3 ]
de Oliveira, P. W. [2 ]
机构：
[1] Shahrood Univ Technol, Dept Phys, Shahrood, Iran
[2] INM Leibniz Inst New Mat, D-66123 Saarbrucken, Germany
[3] Islamic Azad Univ, Dept Chem, Coll Sci, Islamshahr Branch, Tehran, Iran
来源：
CERAMICS INTERNATIONAL | 2015年 / 41卷 / 02期
关键词：
Nanowires; Photoluminescence; Transition metals; Direct nitridation; OPTICAL-PROPERTIES; ALUMINUM NITRIDE; GALLIUM NITRIDE; FIELD-EMISSION; PHOTOLUMINESCENCE; GROWTH; LEVEL;
D O I：
10.1016/j.ceramint.2014.10.117
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Different AlN nanostructures were synthesized by using chemical vapor condensation method. The raw materials were a mixture of Al and NH4Cl powder with different weight ratios as well as Cu and Mn powders, which were used as dopants. The effects of the source materials, dopants, and annealing on optical and structural properties of AlN nanostructures were investigated. Scanning electron microscopy results showed different nanostructures, including nanowires and nanoparticles with different sizes and morphologies. The photoluminescence spectroscopy of the samples was performed at room temperature. Photoluminescence spectra of the samples showed intense peaks in visible regions from undoped, Mn-doped, and Cu-doped samples. Due to the light emission from the samples at different wavelengths, these nanostructures can be used in optoelectronic devices. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码：2917 / 2922
页数：6
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