Effect of microstructure on irradiated ferroelectric thin films

被引：8

作者：

Brewer, Steven J. ^{[1
]}

Zhou, Hanhan ^{[2
]}

Williams, Samuel C. ^{[3
]}

Rudy, Ryan Q. ^{[4
]}

Rivas, Manuel ^{[4
]}

Polcawich, Ronald G. ^{[4
]}

Cress, Cory D. ^{[5
]}

Glaser, Evan R. ^{[5
]}

Paisley, Elizabeth A. ^{[6
]}

Ihlefeld, Jon F. ^{[6
]}

Jones, Jacob L. ^{[2
]}

Bassiri-Gharb, Nazanin ^{[1
,3
]}

机构：

[1] Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA

[2] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[3] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[4] US Army, Res Lab, Adelphi, MD 20783 USA

[5] US Naval Res Lab, Washington, DC 20375 USA

[6] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 121卷 / 24期

基金：

美国国家科学基金会;

关键词：

CHEMICAL SOLUTION DEPOSITION; DOMAIN-WALL MOTION; GRAIN-BOUNDARIES; PIEZOELECTRIC COEFFICIENT; ELECTRICAL-PROPERTIES; POLARIZATION FATIGUE; PZT; CAPACITORS; PERMITTIVITY; EVOLUTION;

D O I：

10.1063/1.4987032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work investigates the role of microstructure on radiation-induced changes to the functional response of ferroelectric thin films. Chemical solution-deposited lead zirconate titanate thin films with columnar and equiaxed grain morphologies are exposed to a range of gamma radiation doses up to 10 Mrad and the resulting trends in functional response degradation are quantified using a previously developed phenomenological model. The observed trends of global degradation as well as local rates of defect saturation suggest strong coupling between ferroelectric thin film microstructure and material radiation hardness. Radiation-induced degradation of domain wall motion is thought to be the major contributor to the reduction in ferroelectric response. Lower rates of defect saturation are noted in samples with columnar grains, due to increased grain boundary density offering more sites to act as defect sinks, thus reducing the interaction of defects with functional material volume within the grain interior. Response trends for measurements at low electric field show substantial degradation of polarization and piezoelectric properties (up to 80% reduction in remanent piezoelectric response), while such effects are largely diminished at increased electric fields, indicating that the defects created/activated are primarily of low pinning energy. The correlation of film microstructure to radiation-induced changes to the functional response of ferroelectric thin films can be leveraged to tune and tailor the eventual properties of devices relying on these materials. Published by AIP Publishing.

引用

页数：11