Next generation of thin film transistors based on zinc oxide

We report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The Zn0-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm(2)/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3 x 10(5). The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.