Barrier heights of Au, Pt, Pd, Ir, Cu on nitrogen terminated (100) diamond determined by X-ray photoelectron spectroscopy

被引:8
作者
Li, F. N. [1 ,2 ]
Li, Y. [1 ]
Fan, D. Y. [1 ]
Wang, H. X. [2 ]
机构
[1] Shenzhen Univ, Coll Optoelect Engn, Collaborat Innovat Ctr Optoelect Sci & Technol, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China
[2] Xi An Jiao Tong Univ, Inst Wide Band Gap Semicond, Xian 710049, Shaanxi, Peoples R China
关键词
CVD diamond; XPS; Barrier heights; Nitrogen terminated; BORON-DOPED DIAMOND; SURFACE-STRUCTURE; CONTACT; FILMS; XPS;
D O I
10.1016/j.apsusc.2018.06.184
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, we used X-ray photoelectron spectroscopy to measure barrier height values for different metals (Au, Pt, Pd, Ir, Cu) on nitrogen terminated (1 0 0) diamond. Three types of diamond surface (hydrogen-, oxygen-, fluorine-terminated diamond surface) were used as the initial surfaces. Then, nitrogen terminated diamond surface was formed by reactive ion etching on the initial diamond surfaces for comparison. Thin films of Au, Pt, Pd, Ir and Cu were evaporated by electron beam to form metal/N-diamond contacts, respectively. The barrier height values for Au, Pt, Pd, Ir and Cu on nitrogen terminated (1 0 0) diamond contacts were determined to be 2.37 eV, 2.14 eV, 1.78 eV, 2.20 eV and 1.84 eV, respectively.
引用
收藏
页码:532 / 537
页数:6
相关论文
共 35 条
[1]   Nanostructuring and oxidation of diamond by two-photon ultraviolet surface excitation: An XPS and NEXAFS study [J].
Baldwin, C. G. ;
Downes, J. E. ;
McMahon, C. J. ;
Bradac, C. ;
Mildren, R. P. .
PHYSICAL REVIEW B, 2014, 89 (19)
[2]   Determination of the structure of amorphous nitrogenated carbon films by combined Raman and x-ray photoemission spectroscopy [J].
Bhattacharyya, S ;
Hong, J ;
Turban, G .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3917-3919
[3]   Fabrication of a nanometer thick nitrogen delta doped layer at the sub-surface region of (100) diamond [J].
Chandran, Maneesh ;
Michaelson, Shaul ;
Saguy, Cecile ;
Hoffman, Alon .
APPLIED PHYSICS LETTERS, 2016, 109 (22)
[4]   Nitrogen-Terminated Diamond (111) Surface for Room-Temperature Quantum Sensing and Simulation [J].
Chou, Jyh-Pin ;
Retzker, Alex ;
Gali, Adam .
NANO LETTERS, 2017, 17 (04) :2294-2298
[5]   The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond [J].
Deferme, W. ;
Tanasa, G. ;
Amir, J. ;
Haenen, K. ;
Nesladek, M. ;
Flipse, C. F. J. .
DIAMOND AND RELATED MATERIALS, 2006, 15 (4-8) :687-691
[6]   Surface structure and electrochemical characteristics of boron-doped diamond exposed to rf N2-plasma [J].
Denisenko, A. ;
Romanyuk, A. ;
Kibler, L. A. ;
Kohn, E. .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2011, 657 (1-2) :164-171
[7]   Surface structure and surface barrier characteristics of boron-doped diamond in electrolytes after CF4 plasma treatment in RF-barrel reactor [J].
Denisenko, A. ;
Romanyuk, A. ;
Pietzka, C. ;
Scharpf, J. ;
Kohn, E. .
DIAMOND AND RELATED MATERIALS, 2010, 19 (5-6) :423-427
[8]   pH sensors based on hydrogenated diamond surfaces -: art. no. 073504 [J].
Garrido, JA ;
Härdl, A ;
Kuch, S ;
Stutzmann, M ;
Williams, OA ;
Jackmann, RB .
APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3
[9]   High carrier mobility in single-crystal plasma-deposited diamond [J].
Isberg, J ;
Hammersberg, J ;
Johansson, E ;
Wikström, T ;
Twitchen, DJ ;
Whitehead, AJ ;
Coe, SE ;
Scarsbrook, GA .
SCIENCE, 2002, 297 (5587) :1670-1672
[10]   Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond [J].
Kageura, Taisuke ;
Kato, Kanami ;
Yamano, Hayate ;
Suaebah, Evi ;
Kajiya, Miki ;
Kawai, Sora ;
Inaba, Masafumi ;
Tanii, Takashi ;
Haruyama, Moriyoshi ;
Yamada, Keisuke ;
Onoda, Shinobu ;
Kada, Wataru ;
Hanaizumi, Osamu ;
Teraji, Tokuyuki ;
Isoya, Junichi ;
Kono, Shozo ;
Kawarada, Hiroshi .
APPLIED PHYSICS EXPRESS, 2017, 10 (05)