Epitaxy-stabilized n-type superconducting cuprates

被引:46
作者
Naito, M
Karimoto, S
Tsukada, A
机构
[1] NTT Corp, Basic Res Labs, Kanagawa 2430198, Japan
[2] Sci Univ Tokyo, Dept Phys, Shinjuku Ku, Tokyo 1628601, Japan
关键词
D O I
10.1088/0953-2048/15/12/306
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the growth of n-type superconducting T'-(La,Ce)(2)CuO4 and infinite-layer (IL) (Sr,La)CuO2 thin films by means of molecular beam epitaxy (MBE). The bulk synthesis of T-(La,Ce)(2)CuO4 and IL-(Sr,La)CuO2 requires complicated techniques: synthesis at low temperatures below 600 degreesC for the former and at high pressures above 3 GPa for the latter. This makes it difficult to grow bulk single crystals. We have found, however, that high-quality single-crystalline films of both compounds can be rather easily prepared by thin-film processes. Single-phase T'-(La,Ce)(2)CuO4 films can be obtained for a wide range of x (0.0 less than or equal to x less than or equal to similar to0.4). The best T-c(end) is over 30 K, which is the highest in the T' family. For IL-(SrLa)CuO2, by using KTaO3 substrates, high T-c(end) over 39 K and also metallic resistivity were achieved for the first time to our knowledge. We describe the key parameters in the growth and the properties of the resultant films.
引用
收藏
页码:1663 / 1668
页数:6
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