Doherty Power Amplifier Based on Asymmetric Cells With Complex Combining Load

被引:22
|
作者
Choi, Woojin [1 ]
Kang, Hyunuk [2 ]
Oh, Hansik [1 ]
Hwang, Keum Cheol [1 ]
Lee, Kang-Yoon [1 ]
Yang, Youngoo [1 ]
机构
[1] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea
[2] Samsung Elect Co Ltd, Telecommun Syst Business, Suwon 16677, South Korea
基金
新加坡国家研究基金会;
关键词
Impedance; Power generation; Modulation; Gain; Transistors; Peak to average power ratio; Microwave theory and techniques; Complex combining load (CCL); Doherty power amplifiers (DPAs); GaN-HEMT; long-term evolution (LTE); Smith chart;
D O I
10.1109/TMTT.2021.3059666
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents a Doherty power amplifier (DPA) based on asymmetric cells with a complex combining load (CCL). In this study, a new and intuitive design technique using the Smith chart is proposed for developing the load network of the CCL-DPA. The peaking amplifier consists of a larger cell size compared to that of the carrier amplifier in order to achieve higher power gain and peak output power in comparison with the conventional CCL-DPAs based on symmetric cells. For verification purposes, the proposed asymmetric CCL-DPA was designed and implemented using 6- and 10-W GaN-HEMTs for the carrier and peaking amplifiers, respectively. For the 1.68-GHz continuous-wave signal, the asymmetric CCL-DPA exhibited a power-added efficiency (PAE) of 68.0% and a drain efficiency (DE) of 73.9% at a peak output power of 43.5 dBm. When an output power back-off of 9.5 dB was used, a PAE of 52.0% and a DE of 54.7% were achieved. Using the long-term evolution signal with a peak-to-average power ratio of 9.6 dB and a signal bandwidth of 10 MHz, a PAE of 53.6%, a DE of 56.4%, and a power gain of 13.5 dB were obtained at a power level of 34.0 dBm. Using a digital predistortion technique, an adjacent channel leakage power ratio of -48 dBc was achieved at the same power level.
引用
收藏
页码:2336 / 2344
页数:9
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